MT46H32M16LFBF-5:B TR Micron Technology Inc, MT46H32M16LFBF-5:B TR Datasheet - Page 70

• Manufacturer Part Number: MT46H32M16LFBF-5:B TR
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5:B TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1382-2

Figure 32: Data Output Timing –
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
All DQ values, collectively
Command
DQS or LDQS/UDQS
CK#
CK
READ
T0
Notes:
3
2
1. Commands other than NOP can be valid during this cycle.
2. DQ transitioning after DQS transitions define
3. All DQ must transition by
4.
NOP
T1
t
AC is the DQ output window relative to CK and is the long-term component of DQ skew.
CL = 3
1
t
LZ
t
AC and
NOP
T2
t
t
RPRE
DQSCK
t
1
t
DQSCK
LZ
t
AC
T2n
4
T2
t
70
DQSQ after DQS transitions, regardless of
NOP
T3
512Mb: x16, x32 Mobile LPDDR SDRAM
1
T2n
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSCK
t
AC
T3
NOP
4
T4
t
1
DQSQ window.
T3n
T4n
T4
NOP
T5
1
© 2004 Micron Technology, Inc. All rights reserved.
T4n
T5n
READ Operation
t
AC.
T5
NOP
T6
1
Don’t Care
T5n
t
t
t
HZ
HZ
RPST