MT46H32M16LFBF-5:B TR Micron Technology Inc, MT46H32M16LFBF-5:B TR Datasheet - Page 96

• Manufacturer Part Number: MT46H32M16LFBF-5:B TR
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5:B TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1382-2

Revision History
Rev. I, Production – 12/09
Rev. H, Production – 03/09
Rev. G, Production – 02/09
Rev. F, Production – 10/08
Rev. E, Production – 8/08
Rev. D, Production – 05/08
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
• Changed all
• Added a note to the
• Added a second paragraph to SELF REFRESH (page 41).
• Added
• Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13).
• Updated step 1 and added Figure 17 (page 50) in Initialization (page 48).
• Updated Status Read Register (page 57).
• Deleted 80Ω from Output Drive Strength (page 56).
• Added 1.2V I/O Option to the following:
• Added 9mm x 13mm 90-ball package to the following:
• Updated Idd Values
• Added “L” low-power option
• Table 10: “Idd6 Specifications and Conditions,” on page 21: Removed 70°C and 15°C
• Table 11: “Electrical Characteristics and Recommended AC Operating Conditions:”
– “Features" and "Options"
– Figure 1: “512Mb Mobile DDR Part Numbering”
– Table 6: “1.2V I/O AC/DC Electrical Characteristics and Operating Conditions”
– Table 15: “1.2V I/O Target Output Drive Characteristics (Three-Quarter Strength)”
– Figure 19: “Extended Mode Register”
– “Options”
– Figure 1: “512Mb Mobile DDR Part Numbering”
– Figure 8: “90-Ball VFBGA Package (9mm x 13mm),” on page 14
– Table 8: “Idd Specifications and Conditions (x16),” on page 19
– Table 9: “Idd Specifications and Conditions (x32),” on page 20
– Figure 1: “512Mb Mobile DDR Part Numbering,” on page 5
– Table 10: “Idd6 Specifications and Conditions,” on page 21
values as they are redundant and shown in Figure 9, "Typical Idd6 Curves"
– Changed the following specification: tRC -75 to 67.5ns
– Removed note 21
t
CKE line to Figure 50 (page 91).
t
RFC values from 97.5ns to 72ns in Table 11 (page 26).
t
CKE symbol in Table 11 (page 26).
96
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Revision History