MT48H32M16LFBF-75:B TR Micron Technology Inc, MT48H32M16LFBF-75:B TR Datasheet - Page 66
![IC SDRAM 512MBIT 133MHZ 54VBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48H32M16LFBF-75:B TR
Manufacturer Part Number
MT48H32M16LFBF-75:B TR
Description
IC SDRAM 512MBIT 133MHZ 54VBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H32M16LFBF-75:B TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1390-2
Figure 36: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T2
NOP
66
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
© 2007 Micron Technology, Inc. All rights reserved.
IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle