MT48H32M16LFBF-75:B TR Micron Technology Inc, MT48H32M16LFBF-75:B TR Datasheet - Page 75

• Manufacturer Part Number: MT48H32M16LFBF-75:B TR
• Description: IC SDRAM 512MBIT 133MHZ 54VBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75:B TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1390-2

Figure 46: Single WRITE Without Auto Precharge
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1 and the WRITE burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
t WR
T3
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
75
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Single bank
PRECHARGE
All banks
Bank
T5
T6
NOP
t RP
PRECHARGE Operation
© 2007 Micron Technology, Inc. All rights reserved.
Bank
Row
ACTIVE
T7
T8
NOP
Don’t Care