IS61LV25616AL-12TI ISSI, IS61LV25616AL-12TI Datasheet - Page 11

• Manufacturer Part Number: IS61LV25616AL-12TI
• Description: SRAM 4Mb 256Kx16 12ns 3.3v
• Manufacturer: ISSI
• Type: Asynchronousr

Specifications of IS61LV25616AL-12TI

• Product Category: SRAM
• Memory Size: 4 Mbit
• Organization: 256 K x 16
• Access Time: 12 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3.135 V
• Maximum Operating Current: 100 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Interface: TTL
• Factory Pack Quantity: 135

IS61LV25616AL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. F
12/15/2011
DATA RETENTION SWITCHING CHARACTERISTICS
V
I
Note 1:
DATA RETENTION WAVEFORM
Symbol
t
t
Dr
sDr
rDr
Dr
Typical values are measured at V
1.65V
1.4V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time See Data Retention Waveform
Recovery Time
CE
DD
V
V
DD
DR
for Data Retention
DD
= 3.0V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
a
DD
= 25
(CE Controlled)
= 2.0V, CE ≥ V
o
c and not 100% tested.
DD
Data Retention Mode
CE ≥ V
– 0.2V
1-800-379-4774
DD
- 0.2V
(LL)
Options
Com.
Ind.
Min.
2.0
t
—
—
rc
0
t
RDR
Typ.
—
—
—
—
5
(1)
Max.
3.6
10
15
—
—
Unit
mA
ns
ns
V
11