IS61LV25616AL-12TI ISSI, IS61LV25616AL-12TI Datasheet - Page 4

• Manufacturer Part Number: IS61LV25616AL-12TI
• Description: SRAM 4Mb 256Kx16 12ns 3.3v
• Manufacturer: ISSI
• Type: Asynchronousr

Specifications of IS61LV25616AL-12TI

• Product Category: SRAM
• Memory Size: 4 Mbit
• Organization: 256 K x 16
• Access Time: 12 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 3.135 V
• Maximum Operating Current: 100 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Interface: TTL
• Factory Pack Quantity: 135

OPERATING RANGE
IS61LV25616AL
DC ELECTRICAL CHARACTERISTICS
V
V
V
I
I
Notes:
1. V
4
ABSOLUTE MAXIMUM RATINGS
t
P
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
Symbol Parameter
V
Range
Commercial
Industrial
Symbol
V
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
stg
term
t
LI
Lo
IL
oH
oL
IH
IL
(min.) = –2.0V for pulse width less than 10 ns.
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
–40°C to +85°C
0°C to +70°C
(1)
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
DD
DD
= Min., I
= Min., I
Integrated Silicon Solution, Inc. — www.issi.com —
(Over Operating Range)
3.3V +10%, -5%
3.3V +10%, -5%
In
out
–0.5 to V
≤ V
–65 to +150
oH
oL
≤ V
10ns
Value
DD
= 8.0 mA
= –4.0 mA
1.0
DD
DD
+0.5
V
DD
Unit
°C
W
V
3.3V + 10%
3.3V + 10%
Com.
Com.
Ind.
Ind.
12ns
Min.
–0.3
2.4
2.0
—
–2
–5
–2
–5
V
DD
Max.
0.4
0.8
—
2
5
2
5
+ 0.3
1-800-379-4774
12/15/2011
Unit
µA
µA
Rev. F
V
V
V
V