MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 8
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MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
General Description
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
The 1Gb Mobile low-power DDR SDRAM is a high-speed CMOS, dynamic random-ac-
cess memory containing 1,073,741,824 bits. It is internally configured as a quad-bank
DRAM. Each of the x16’s 268,435,456-bit banks is organized as 16,384 rows by 1,024 col-
umns by 16 bits. Each of the x32’s 268,435,456-bit banks is organized as 8,192 rows by
1,024 columns by 32 bits. In the reduced page-size (LG) option, each of the x32’s
268,435,456-bit banks are organized as 16,384 rows by 512 columns by 32 bits.
Note:
1. Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ should
be interpreted as any and all DQ collectively, unless specifically stated otherwise. Addi-
tionally, the x16 is divided into 2 bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the upper byte
(DQ[15:8]), DM refers to UDM and DQS refers to UDQS. The x32 is divided into 4 bytes.
For DQ[7:0], DM refers to DM0 and DQS refers to DQS0. For DQ[15:8], DM refers to
DM1 and DQS refers to DQS1. For DQ[23:16], DM refers to DM2 and DQS refers to
DQS2. For DQ[31:24], DM refers to DM3 and DQS refers to DQS3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all requirements.
3. Any specific requirement takes precedence over a general statement.
8
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
General Description
©2007 Micron Technology, Inc. All rights reserved.