MT46H64M16LFCK-6 IT:A TR Micron Technology Inc, MT46H64M16LFCK-6 IT:A TR Datasheet - Page 91
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-6 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-6 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H64M16LFCK-6 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1335-2
Figure 52: Deep Power-Down Mode
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
CKE
CK#
CK
All banks idle with no
activity on the data bus
1
Notes:
NOP
T0
1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down.
3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required.
t
IS
DPD
T1
Enter deep power-down mode
2
T2
(
(
(
)
(
)
(
t
)
)
)
(
CKE
(
(
(
)
(
)
)
)
)
91
Ta0
1
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
Ta1
Exit deep power-down mode
T = 200µs
©2007 Micron Technology, Inc. All rights reserved.
Ta2
NOP
Power-Down
Don’t Care
Ta3
PRE
3