M95512-RMN6TP STMicroelectronics, M95512-RMN6TP Datasheet - Page 33

IC EEPROM 512KBIT 2MHZ 8SOIC

M95512-RMN6TP

Manufacturer Part Number
M95512-RMN6TP
Description
IC EEPROM 512KBIT 2MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of M95512-RMN6TP

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
512K (64K x 8)
Speed
2MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Density
512Kb
Interface Type
Serial (SPI)
Organization
64Kx8
Access Time (max)
150ns
Frequency (max)
2MHz
Write Protection
Yes
Data Retention
40Year
Operating Supply Voltage (typ)
2.5/3.3/5V
Operating Temp Range
-40C to 85C
Supply Current
3mA
Operating Supply Voltage (min)
1.8V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6356-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M95512-RMN6TP
Manufacturer:
TDK
Quantity:
324
Part Number:
M95512-RMN6TP
Manufacturer:
ST
0
M95512-DR, M95512-W, M95512-R
Note:
Table 12.
1. Not 100% tested.
Table 13.
This parameter is not tested but established by characterization and qualification. For
endurance estimates in a specific application, please refer to AN2014.
Table 14.
1. Current products are identified by AB process letters AB.
2. Characterized value, not tested in production.
C
C
N
Symbol
Symbol
I
Symbol
CC0
OUT
IN
cycle
I
V
V
V
I
I
V
CC1
I
CC
LO
OH
LI
OL
IH
IL
(2)
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current
(Standby Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Output capacitance (Q)
Input capacitance (D)
Input capacitance (other pins)
Endurance
Parameter
Capacitance
Memory cell characteristics
DC characteristics (current
Parameter
Parameter
(1)
TA = 25°C, 1.8V < Vcc < 5.5V
Doc ID 11124 Rev 14
or T
Test conditions: V
C = 0.1V
T
Test condition
V
A
V
A
CC
C = 0.1V
= –40 to 85 °C (device grade 6)
CC
S = V
= –40 to 125 °C (device grade 3)
V
S = V
V
= 2.5 V and I
CC
= 2.5 V and I
CC
V
CC
2.5 V < V
2.5 V < V
During t
CC
= 5 V and I
V
CC
(1)
= 5 V and I
CC
/0.9V
IN
= 2.5 V, Q = open
Test condition
, V
CC
V, Q = open
, V
M95512-W products)
= V
V
OUT
/0.9V
V
V
IN
OUT
CC
W
IN
IN
SS
CC
CC
, S = V
CC
= V
OH
at 5 MHz, V
= 0 V
= 0 V
= V
OL
or V
= 0 V
CC
OH
< 5.5 V
< 5.5 V
OL
= 2.5 to 5.5 V at
SS
= –0.4 mA or
SS
= 1.5 mA or
at 5 MHz,
= –2 mA
= 2 mA
CC
or V
CC
or V
,
1,000,000
CC
CC
CC
,
Min.
Min.
= 5
DC and AC parameters
0.7 V
0.8 V
–0.45
Min.
Max.
-
CC
CC
Max.
8
8
6
0.3 V
V
Max.
Write cycle
CC
± 2
± 2
0.4
3
5
6
5
+1
Unit
CC
Unit
pF
pF
pF
33/48
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V

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