NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 47

IC FLASH 128MBIT 48TSOP

NAND128W3A2BN6E

Manufacturer Part Number
NAND128W3A2BN6E
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Access Time
12µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
497-5037
497-5037

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND128W3A2BN6E
Manufacturer:
MICRON
Quantity:
3 000
Part Number:
NAND128W3A2BN6E
Manufacturer:
MICRON
Quantity:
5 000
Part Number:
NAND128W3A2BN6E
Manufacturer:
ST
Quantity:
1 000
Part Number:
NAND128W3A2BN6E
Manufacturer:
ST
0
Part Number:
NAND128W3A2BN6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
NAND128W3A2BN6E
Quantity:
1 800
NAND128-A, NAND256-A
Figure 29. Page program AC waveform
Figure 30. Block erase AC waveform
RB
CL
AL
I/O
W
R
E
Page Program
Setup Code
I/O
RB
R
CL
AL
W
E
80h
Setup Command
Block Erase
(Write Cycle time)
tWLWL
60h
cycle 1
Add.N
Address Input
(Write Cycle time)
cycle 1
tWLWL
Block Address
Add.
cycle 2
Add.N
Input
cycle 2
tWHBL
Add.
cycle 3
Add.N
Confirm
Code
D0h
tWLWL
N
Block Erase
Data Input
(Erase Busy time)
tBLBH3
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
70h
Read Status Register
Program
Page
SR0
DC and AC parameters
Read Status Register
ai08038c
70h
ai08037b
SR0
47/59

Related parts for NAND128W3A2BN6E