NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 48

IC FLASH 128MBIT 48TSOP

NAND128W3A2BN6E

Manufacturer Part Number
NAND128W3A2BN6E
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Access Time
12µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
497-5037
497-5037

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DC and AC parameters
10.1
48/59
Figure 31. Reset AC waveform
Ready/busy signal electrical characteristics
Figures
Ready/Busy signal. The value required for the resistor R
following equation:
Therefore,
where I
max is determined by the maximum value of t
Figure 32. Ready/Busy AC waveform
RB
I/O
AL
CL
W
R
L
Figure
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
32,
FFh
Figure
ready V DD
33, and
R P min
R P min 3V
Figure 34
=
t f
(Reset Busy time)
V OL
(
-------------------------------------------------------------
V DDmax V OLmax
tBLBH4
(
)
=
I OL
show the electrical characteristics for the
busy
r
-------------------------- -
8mA
.
3.2V
+
+
I L
I L
P
t r
can be calculated using the
)
V OH
NI3087B
NAND128-A, NAND256-A
ai08043
P

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