NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 22

• Manufacturer Part Number: NAND128W3A2BN6E
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Access Time: 12µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 497-5037; 497-5037

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 14. Read Block Diagrams
Note: 1. Highest address depends on device density.
Figure 15. Sequential Row Read Operations
Figure 16. Sequential Row Read Block Diagrams
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A9-A26 (1)
A9-A26 (1)
Block
Block
RB
A0-A7
I/O
A0-A7
Read B Command, x8 Devices
Read A Command, x8 Devices
(1st half Page)
(1st half Page)
Area A
Area A
Command
Read B Command, X8 Devices
01h/ 50h
Read A Command, X8 Devices
(1st half Page)
(1st half Page)
Code
00h/
Area A
Area A
(2nd half Page)
(2nd half Page)
Address Inputs
(Read Busy time)
Area B
Area B
(2nd half Page)
(2nd half Page)
tBLBH1
Area B
Area B
(Spare)
(Spare)
Area C
Area C
Busy
(Spare)
(Spare)
Area C
Area C
1st page
1st page
2nd page
Nth page
2nd page
Nth page
Page Output
A9-A26 (1)
A0-A2 (x16)
1st
A0-A3 (x8)
tBLBH1
A9-A26 (1)
Block
Block
A0-A7
Read C Command, x8/x16 Devices
Busy
Read A Command, x16 Devices
Read C Command, X8/x16 Devices
Read A Command, X16 Devices
A4-A7 (x8), A3-A7 (x16) are don't care
Area A
Area A
Page Output
(main area)
2nd
Area A
(main area)
tBLBH1
Area A
Area A/ B
Area A/ B
Busy
(Spare)
Area C
(Spare)
Area C
(Spare)
Area C
(Spare)
Area C
Page Output
Nth
1st page
2nd page
Nth page
1st page
2nd page
Nth page
ai07597
AI07598
AI07596