CY7C1168V18-400BZXC Cypress Semiconductor Corp, CY7C1168V18-400BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1168V18-400BZXC
• Description: IC SRAM 18MBIT 400MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1168V18-400BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z .........–0.5V to V
DC Input Voltage
Electrical Characteristic
The DC Electrical Characteristics over the operating range follows.
Notes
Document Number: 001-06620 Rev. *D
V
V
V
V
V
V
V
V
I
I
V
I
I
AC Input Requirements
Over the operating range
V
V
15. Power up: Is based on a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
[19]
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power Down Current Max V
Input HIGH Voltage
Input LOW Voltage
DD
[11]
Operating Supply
............................... –0.5V to V
DD
DDQ
Relative to GND .......–0.5V to + 2.9V
Description
Description
Relative to GND ..... –0.5V to + V
DDQ
[11]
, whichever is larger, V
OH
OL
= (V
= –(V
DDQ
DDQ
[18]
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
DD
(min) within 200 ms. During this time V
REF
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Both Ports Deselected,
V
f = f
Inputs Static
OH
OL
DDQ
DD
IN
(max) = 0.95V or 0.54V
DD
= 0.1 mA, Nominal Impedance
max
max
= –0.1 mA, Nominal Impedance
≥ V
= Max, I
+ 0.3V
+ 0.3V
DD
IH
= 1/t
= 1/t
I
I
,
DD
or V
≤ V
≤ V
Test Conditions
Test Conditions
CYC
CYC
OUT
DDQ
DDQ,
IN
,
≤ V
= 0 mA,
[12]
Output Disabled
IL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
DDQ
Commercial
Industrial
, whichever is smaller.
Range
IH
300 MHz
333 MHz
375 MHz
400 MHz
300 MHz
333 MHz
375 MHz
400 MHz
< V
DD
and V
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
DDQ
V
V
–40°C to +85°C
Temperature
DDQ
DDQ
V
0°C to +70°C
V
V
< V
DDQ
REF
REF
Ambient
–0.15
–0.24
0.68
DD.
Min
V
Min
1.7
1.4
/2 – 0.12
/2 – 0.12
–2
–2
SS
+ 0.1
+ 0.2
– 0.2
0.75
Typ
Typ
1.8
1.5
–
–
1.8 ± 0.1V
V
V
V
V
V
DD
DDQ
DDQ
V
V
DDQ
DDQ
REF
REF
[15]
V
1020
1080
Max
0.95
Max
V
850
920
250
260
290
300
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
2
2
+ 0.15
+ 0.24
– 0.1
– 0.2
Page 20 of 27
V
1.4V to
DDQ
V
DD
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
[15]
μA
μA
V
V
V
V
V
V
V
V
V
V
V
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