CY7C1168V18-400BZXC Cypress Semiconductor Corp, CY7C1168V18-400BZXC Datasheet - Page 23

• Manufacturer Part Number: CY7C1168V18-400BZXC
• Description: IC SRAM 18MBIT 400MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1168V18-400BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveform
Read/Write/Deselect Sequence
Notes
Document Number: 001-06620 Rev. *D
28. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1.
29. Outputs are disabled (High-Z) one clock cycle after a NOP.
QVLD
R/W
DQ
CQ
CQ
LD
A
K
K
1
NOP
t KH
(Read Latency = 2.5 Cycles)
t KL
t
t SA t HA
SC
A0
READ
2
t HC
t CYC
A1
READ
3
t
KHKH
t
QVLD
Figure 7. Waveform for 2.5 Cycle Read Latency
4
NOP
t CLZ
t CCQO
t CQOH
t CO
t CQOH
Q00
5
NOP
Q01 Q10
t
QVLD
t DOH
t CCQO
NOP
6
Q11
t
CQDOH
t CQD
A2
t
CHZ
WRITE
7
t SD
t HD
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
D20 D21
A3
WRITE
8
t CQH
t SD
[28, 29]
D30
A4
READ
9
t CQHCQH
D31
t
HD
DON’T CARE
10
NOP
t
QVLD
NOP
11
UNDEFINED
Page 23 of 27
Q40
12
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