CY7C1460AV25-200BZC Cypress Semiconductor Corp, CY7C1460AV25-200BZC Datasheet - Page 9

• Manufacturer Part Number: CY7C1460AV25-200BZC
• Description: IC SRAM 36MBIT 200MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1460AV25-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 36M (1M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05354 Rev. *D
Partial Write Cycle Description
Read
Write – No bytes written
Write Byte a – (DQ
Write Byte b – (DQ
Write Bytes b, a
Write Byte c – (DQ
Write Bytes c, a
Write Bytes c, b
Write Bytes c, b, a
Write Byte d – (DQ
Write Bytes d, a
Write Bytes d, b
Write Bytes d, b, a
Write Bytes d, c
Write Bytes d, c, a
Write Bytes d, c, b
Write All Bytes
Read
Write – No Bytes Written
Write Byte X − (DQ
Write All Bytes
Note:
8. Table only lists a partial listing of the byte write combinations. Any combination of BW
Read
Write – No Bytes Written
Write Byte a – (DQ
Write Byte b – (DQ
Write Both Bytes
Function (CY7C1460AV25)
c
a
b
d
x
a
b
and DQP
Function (CY7C1462AV25)
Function (CY7C1464AV25)
and DQP
and DQP
and DQP
and DQP
and DQP
and DQP
c
a
b
d
x)
)
)
)
a
b
)
)
)
[1, 2, 3, 8]
WE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
is valid. Appropriate write will be done based on which byte write is active.
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
d
WE
H
L
L
L
L
WE
BW
H
L
L
L
LL
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
c
BW
X
H
H
L
L
b
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
b
All BW = L
Page 9 of 27
BW
BW
H
H
H
X
L
L
X
L
BW
a
x
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
a
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