CAT34C02YI-G ON Semiconductor, CAT34C02YI-G Datasheet - Page 2

• Manufacturer Part Number: CAT34C02YI-G
• Description: IC EEPROM 2KBIT 400KHZ 8TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT34C02YI-G

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 2K (256 x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Organization: 256 K x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.4 MHz
• Access Time: 900 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.7 V
• Maximum Operating Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 1.8 V , 2.5 V , 3.3 V , 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 34C02YI-G

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
5. When not driven, the WP, A0, A1 and A2 pins are pulled down to GND internally. For improved noise immunity, the internal pull-down is
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Table 4. PIN IMPEDANCE CHARACTERISTICS
Operating Temperature
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
Voltage on Pin A
N
C
I
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
Symbol
and JEDEC test methods.
relatively strong; therefore the external driver must be able to supply the pull-down current when attempting to drive the input HIGH. To
conserve power, as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
source.
WP
END
I
A
IN
Symbol
Symbol
V
I
I
V
V
(Note 5)
CC
SB
I
T
OL
(Note 4)
(Note 5)
L
IH
IL
(Note 3)
DR
Supply Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Standby Current
CC
0
with Respect to Ground
Endurance
Data Retention
SDA I/O Pin Capacitance
Other Input Pins
WP Input Current
Address Input Current
(A0, A1, A2)
Product Rev H
= 5 V, 25°C
Parameter
Parameter
Parameter
Parameter
V
V
All I/O Pins at GND or V
CC
CC
V
V
CC
CC
< 3.6 V, f
> 3.6 V, f
Pin at GND or V
> 2.5 V, I
< 2.5 V, I
(Note 2)
(V
SCL
SCL
(V
http://onsemi.com
V
CC
OL
OL
CC
IN
= 100 kHz
= 400 kHz
= 3 mA
= 1 mA
= 1.7 V to 5.5 V, T
= 0 V, f = 1.0 MHz, V
Test Conditions
= 1.7 V to 5.5 V, T
CC
V
V
V
V
V
V
IN
IN
IN
IN
IN
IN
CC
CC
2
< V
< V
< V
< V
< V
< V
Conditions
1,000,000
+ 1.5 V, for periods of less than 20 ns.
V
V
IH
IH
IH
IH
IH
IH
IN
IN
, V
, V
, V
, V
, V
, V
Min
100
> V
> V
T
V
T
V
CC
CC
CC
CC
CC
CC
A
A
CC
CC
IH
IH
= −40°C to +85°C
= −40°C to +85°C
A
= 5.5 V
= 3.6 V
= 1.7 V
= 5.5 V
= 3.6 V
= 1.7 V
A
≤ 3.3 V
> 3.3 V
= −40°C to +85°C, unless otherwise specified.)
CC
= −40°C to +85°C, unless otherwise specified.)
CC
+ 0.5 V. During transitions, the voltage on any pin may
= 5.0 V
CC
), the strong pull-down reverts to a weak current
0.7 x V
−0.5 to +10.5
−45 to +130
−65 to +150
−0.5 to +6.5
−0.5
Min
Rating
Program/ Erase Cycles
CC
Max
130
120
80
50
35
25
8
6
2
2
V
0.3 x V
Years
Units
CC
Max
0.4
0.2
1
2
1
3
2
+ 0.5
CC
Units
Units
Unit
mA
mA
mA
mA
mA
°C
°C
pF
V
V
V