M45PE40-VMP6G NUMONYX, M45PE40-VMP6G Datasheet - Page 37
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M45PE40-VMP6G
Manufacturer Part Number
M45PE40-VMP6G
Description
IC FLASH 4MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M45PE40-VMP6G.pdf
(49 pages)
Specifications of M45PE40-VMP6G
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Clock Frequency
25MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Base Number
45
Frequency
75MHz
Ic Generic Number
45PE40
Memory Configuration
512K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M45PE40-VMP6G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M45PE40-VMP6G
Manufacturer:
MICRON
Quantity:
20 000
M45PE40
Table 12.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
CHDX
CHSH
SHCH
WHSL
SHWL
PW
DVCH
CLQV
CLQX
CH
SLCH
CHSL
SHSL
DP
PP
CL
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
CH
f
f
PE
SE
C
R
(1)
(1)
(2)
(3)
(3)
(2)
(2)
+ t
CL
must be greater than or equal to 1/ f
t
t
t
t
t
t
DSU
t
CSH
t
Alt
CLH
CSS
AC characteristics (25 MHz operation)
CLL
DIS
f
DH
t
HO
C
V
Clock frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR,
RDID
Clock frequency for read instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby power mode
Page write cycle time (256 bytes)
Page write cycle time (n bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Test conditions specified in
Parameter
(2)
(peak to peak)
C
(max).
Table 8
and
0.03
D.C.
D.C.
Min
200
100
18
50
18
10
10
10
10
5
5
0
Table 9
n*0.8/256
n*0.8/256
DC and AC parameters
10.2+
0.4+
Typ
1.2
11
10
1
Max
25
20
15
15
30
25
20
3
5
5
MHz
MHz
Unit
V/ns
37/49
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s