CY7C144AV-25AXC Cypress Semiconductor Corp, CY7C144AV-25AXC Datasheet - Page 8

IC SRAM 64KBIT 25NS 64LQFP

CY7C144AV-25AXC

Manufacturer Part Number
CY7C144AV-25AXC
Description
IC SRAM 64KBIT 25NS 64LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C144AV-25AXC

Memory Size
64K (8K x 8)
Package / Case
64-LQFP
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Speed
25ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
25 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
165 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
3.3 V
Memory Configuration
8K X 8
Supply Voltage Range
3V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2156
CY7C144AV-25AXC

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C144AV-25AXC
Manufacturer:
CYPRESS
Quantity:
1 831
Part Number:
CY7C144AV-25AXC
Manufacturer:
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Quantity:
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Part Number:
CY7C144AV-25AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
AC Test Loads and Waveforms
.
Switching Characteristics
Document #: 38-06051 Rev. *C
OUTPUT
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes:
15. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
16. To access RAM, CE=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
17. At any given temperature and voltage condition for any given device, t
18. Test conditions used are Load 3.
19. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
READ CYCLE
WRITE CYCLE
C = 30 pF
(a) Normal Load (Load 1)
[16]
I
Busy waveform.
[19]
[19]
OI
Parameter
[16]
[16]
/I
[17, 18, 19]
[17, 18, 19]
[17, 18, 19]
[17, 18, 19]
OH
and 30-pF load capacitance.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE Low to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-Up to Write Start
Write Pulse Width
Data Set-Up to Write End
3.3V
R1 = 590Ω
R2 = 435Ω
Over the Operating Range
GND
3.0V
Description
3 ns
OUTPUT
(b) Thévenin Equivalent (Load 1)
10%
C = 30 pF
ALL INPUT PULSES
90%
HZCE
R
[15]
is less than t
TH
= 250Ω
LZCE
90%
Min.
and t
V
20
20
16
16
16
12
3
3
3
0
0
0
TH
10%
HZOE
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
= 1.4V
-20
3 ns
is less than t
CY7C007AV/017AV
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
Max.
20
20
12
12
12
20
OUTPUT
SCE
(c) Three-State Delay (Load 2)
LZOE
C = 5 pF
time.
(Used for t
including scope and jig)
.
CY7C007AV/017AV
Min.
25
25
20
20
20
15
3
3
3
0
0
0
-25
LZ
Max.
, t
25
25
13
15
15
25
HZ
, t
3.3V
HZWE
Page 8 of 20
R1 = 590Ω
R2 = 435Ω
Unit
& t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LZWE
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