MT47H32M8BP-37E:B TR Micron Technology Inc, MT47H32M8BP-37E:B TR Datasheet - Page 89

• Manufacturer Part Number: MT47H32M8BP-37E:B TR
• Description: IC DDR2 SDRAM 256MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M8BP-37E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 160mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1049-2

Figure 45: Consecutive READ Bursts
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
t CCD
RL = 3
t CCD
NOP
NOP
T1
T1
RL = 4
t
AC,
89
t
DQSCK, and
READ
READ
Bank,
Bank,
Col b
Col b
T2
T2
T2n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
t
T3
T3
DQSQ.
256Mb: x4, x8, x16 DDR2 SDRAM
DO
n
T3n
T3n
NOP
NOP
T4
T4
DO
n
Transitioning Data
T4n
T4n
NOP
NOP
T5
T5
©2003 Micron Technology, Inc. All rights reserved.
DO
b
T5n
T5n
T6
NOP
T6
NOP
Don’t Care
DO
b
T6n
T6n
READ