AUIRGDC0250 International Rectifier, AUIRGDC0250 Datasheet

AUIRGDC0250

Manufacturer Part Number

AUIRGDC0250

Description

IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE

Manufacturer

International Rectifier

Datasheet

1.AUIRGDC0250.pdf (11 pages)

Specifications of AUIRGDC0250

Rohs

yes

Collector- Emitter Voltage Vceo Max

1.2 kV

Collector-emitter Saturation Voltage

1.57 V

Maximum Gate Emitter Voltage

20 V

Continuous Collector Current At 25 C

141 A

Gate-emitter Leakage Current

100 nA

Power Dissipation

543 W

Package / Case

TO-220

Continuous Collector Current Ic Max

141 A

Mounting Style

Through Hole

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*Qualification standards can be found at http://www.irf.com/

Features

•

Benefits

•

Application

•

Thermal Resistance

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

NOMINAL

CES

STG

θ JC

θ CS

θ JA

Device optimized for soft switching applications

High Efficiency due to Low V

losses

Rugged transient performance for increased reliability

Excellent current sharing in parallel operation

Low EMI

PTC Heater

Relay Replacement

@ T

Low V

Low Switching Losses

Square RBSOA

100% of The Parts Tested for I

Positive V

Lead-Free, RoHS Compliant

Automotive Qualified *

@ T

(IGBT)

= 25°C

= 100°C

= 25°C

= 100°C

CE (on)

Planar IGBT Technology

Temperature Coefficient.

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

Pulse Collector Current, V

Clamped Inductive Load Current, V

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec. (1.6mm from case)

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance Junction-to-Case (IGBT)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient

CE(on)

, low switching

= 15V

Parameter

) is 25°C, unless otherwise specified.

= 20V

n-channel

Gate

Min.

–––

AUIRGDC0250

Super-TO-220

Collector

10 lbf·in (1.1N·m)

CE(on)

-55 to +150

= 81A@ T

141

Max.

1200

300

Typ.

0.50

±20

±30

543

217

–––

NOMINAL

typ. =

CES

= 1200V

1.37V@ 33A

Max.

0.23

Emitter

= 33A

–––

www.irf.com

= 100°C

PD - 96432A

04/19/12

Units

°C/W

°C

Related parts for AUIRGDC0250

AUIRGDC0250 Summary of contents

Page 1

... AUIRGDC0250 1200V CES I = 81A 100° 33A NOMINAL E V typ. = 1.37V@ 33A CE(on Super-TO-220 AUIRGDC0250 Gate Collector Emitter Max. 1200 141 ±20 ±30 543 217 -55 to +150 300 10 lbf·in (1.1N·m) Min. Typ. Max. ...

Page 2

... AUIRGDC0250 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Δ V /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) Δ V /Δ TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-Super-TO-220 Class M4 (+/- 800 V ) (per AEC-Q101-002) Class H3A (+/- 6000V ) (per AEC-Q101-001) Class C5 (+/- 2000 V ) (per AEC-Q101-005) Yes AUIRGDC0250 †† N/A 3 ...

Page 4

... AUIRGDC0250 160 140 120 100 (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 25° 150°C Single Pulse 0. 100 V CE (V) Fig Forward SOA ≤ 25°C, T 150° 1000 100 ...

Page 5

... VGE = 8.0V VGE = 7. 17A 33A 66A 17A 33A 66A AUIRGDC0250 100 18V VGE = 15V VGE = 12V 80 VGE = 10V VGE = 9.0V VGE = 8.0V 60 VGE = 7. (V) Fig Typ. IGBT Output Characteristics T = 150° ...

Page 6

... AUIRGDC0250 OFF (A) Fig Typ. Energy Loss vs 150° 400μ 600V OFF (Ω) Fig Typ. Energy Loss vs 150° 400μ 600V 10000 Cies ...

Page 7

... J τ τ τ τ 1 τ τ τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) AUIRGDC0250 Ri (°C/W) τi (sec 0.0015 0.000003 τ C τ 0.0365 0.000118 4 τ 0.1356 0.001438 4 0.0554 0.006412 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc ...

Page 8

... AUIRGDC0250 DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit VCC G force VCC 700 tf 600 500 400 90% I 300 200 100 10 Eoff Loss -100 - time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 150° ...

Page 9

... AUIRGDC0250 9 ...

Page 10

... AUIRGDC0250 Ordering Information Base part number Package Type AUIRGDC0250 Super-TO-220 10 Standard Pack Complete Part Number Form Quantity Tube 50 AUIRGDC0250 www.irf.com ...

Page 11

... Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center 101 N. Sepulveda Blvd., El Segundo, California 90245 www.irf.com http://www.irf.com/technical-info/ WORLD HEADQUARTERS: Tel: (310) 252-7105 AUIRGDC0250 11 ...

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