AUIRGDC0250 International Rectifier, AUIRGDC0250 Datasheet - Page 6

• Manufacturer Part Number: AUIRGDC0250
• Description: IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE
• Manufacturer: International Rectifier

Specifications of AUIRGDC0250

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.2 kV
• Collector-emitter Saturation Voltage: 1.57 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 141 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 543 W
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 141 A
• Mounting Style: Through Hole

AUIRGDC0250
T
J
6
= 150°C; L = 400μH; V
T
J
= 150°C; L = 400μH; V
10000
1000
100
32
30
28
26
24
50
45
40
35
30
25
20
15
10
10
Fig. 17 - Typ. Capacitance vs. V
1
Fig. 15 - Typ. Energy Loss vs. R
0
0
0
Fig. 13 - Typ. Energy Loss vs. I
10
100
V
20
GE
= 0V; f = 1MHz
20
E OFF
200
CE
CE
E OFF
40
Cies
Cres
Coes
= 600V, I
30
V CE (V)
= 600V, R
Rg (Ω)
I C (A)
300
40
60
400
CE
G
50
= 5Ω; V
= 33A; V
80
500
C
CE
60
G
GE
100
600
GE
70
= 15V
= 15V
T
J
= 150°C; L = 400μH; V
T
J
= 150°C; L = 400μH; V
10000
10000
1000
1000
100
100
16
14
12
10
Fig. 16- Typ. Switching Time vs. R
8
6
4
2
0
Fig. 14 - Typ. Switching Time vs. I
Fig. 18 - Typical Gate Charge vs. V
0
0
0
20
Q G , Total Gate Charge (nC)
20
V CES = 600V
V CES = 400V
20
I
40
CE
td OFF
= 33A; L = 2.0mH
CE
CE
t F
60
td OFF
t F
40
= 600V, I
= 600V, R
R G (Ω)
I C (A)
40
80
60
100 120 140 160
CE
G
60
= 5Ω; V
= 33A; V
80
C
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G
GE
100
GE
80
GE
= 15V
= 15V