AUIRGDC0250 International Rectifier, AUIRGDC0250 Datasheet - Page 4

• Manufacturer Part Number: AUIRGDC0250
• Description: IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE
• Manufacturer: International Rectifier

Specifications of AUIRGDC0250

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.2 kV
• Collector-emitter Saturation Voltage: 1.57 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 141 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 543 W
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 141 A
• Mounting Style: Through Hole

AUIRGDC0250
4
Fig. 1 - Maximum DC Collector Current vs.
1000
0.01
1000
100
160
140
120
100
0.1
100
10
80
60
40
20
10
1
0
1
25
1
10
T
Tc = 25°C
Tj = 150°C
Single Pulse
Fig. 5- Reverse Bias SOA
C
T
= 25°C, T
J
Case Temperature
= 150°C; V
50
Fig. 3 - Forward SOA
10
100
J
75
V CE (V)
≤
T C (°C)
V CE (V)
100
150°C; V
GE
= 20V
100
1000
1000
GE
125
1msec
10μsec
100μsec
DC
=15V
10000
10000
150
600
500
400
300
200
100
5.0
4.5
4.0
3.5
3.0
100
80
60
40
20
0
Fig. 2 - Power Dissipation vs. Case
0
25
25
0
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
50
50
2
Temperature
T J , Temperature (°C)
T
J
75
75
= -40°C; tp = 20μs
4
T C (°C)
V CE (V)
100
100
6
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
I C = 1mA
125
125
8
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150
150
10