STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 3

• Manufacturer Part Number: STGP35HF60W
• Description: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
• Manufacturer: STMicroelectronics

Specifications of STGP35HF60W

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

STGP35HF60W
1
Electrical ratings
Table 2.
1.
2.
3. V
Table 3.
Symbol
Symbol
R
R
I
V
I
P
thj-case
I
I
thj-amb
CL
CP
V
Calculated according to the iterative formula:
Pulse width limited by maximum junction temperature and turn-off within RBSOA
T
C
C
CLAMP
CES
TOT
T
GE
stg
(1)
(1)
(2)
j
(3)
= 80% (V
Thermal resistance junction-case IGBT
Thermal resistance junction-ambient
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Total dissipation at T
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
CES
), V
I
GE
C
(
T
= 15 V, R
C
)
Doc ID 023894 Rev 1
=
C
= 25 °C
-------------------------------------------------------------------------------------------------------
R
Parameter
Parameter
G
thj c
= 10 Ω, T
–
GE
×
= 0)
V
C
C
CE sat
J
= 25 °C
= 100 °C
= 150 °C
(
T
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
C
)
)
– 55 to 150
Value
Value
0.63
62.5
± 20
600
150
200
Electrical ratings
60
35
80
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
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