STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 7

• Manufacturer Part Number: STGP35HF60W
• Description: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
• Manufacturer: STMicroelectronics

Specifications of STGP35HF60W

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

STGP35HF60W
Figure 8.
Figure 10. Switching losses vs. temperature
Figure 12. Switching losses vs. collector
V
GE
E (µJ)
E (µJ)
400
350
300
250
200
150
800
600
400
200
(V)
12
8
4
0
0
25
10
0
Gate charge vs. gate-emitter
voltage
current
15
30
50
20
V
E
ON
CC
I
60
C
V
R
= 20 A
CE
= 400 V
G
V
= 10 Ω, T
= 400 V, V
75
25
CE
I
C
= = 20 A, R
= 400 V, , V
E
90
OFF
E
30
J
ON
= 125 °C
GE
G
100
= 15 V
GE
=10 Ω
120 Q
= 15 V
35
E
AM16257v1
AM16259v1
OFF
AM16255v1
T
Doc ID 023894 Rev 1
I
J
G
C
(°C)
(A)
(nC)
Figure 9.
Figure 11. Switching losses vs. gate
Figure 13. Turn-off SOA
I
C
C (pF)
E (µJ)
100
4000
3000
2000
1000
1500
1000
0.1
(A)
10
500
1
0
0
1
0
0
C
res
Capacitance variations
resistance
10
60
C
10
oes
V
GE
20
= 15 V, R
Electrical characteristics
T
V
120
f = 1 MHz
I
C
C
V
CE
= 150 °C
= 20 A, T
GE
= 400 V, V
= 0
E
30
OFF
G
100
= 10 Ω
J
180
= 125 °C
GE
C
= 15 V
40
ies
E
AM16258v1
AM16260v1
ON
AM16256v1
V
V
R
CE
CE
g
(Ω)
(V)
(V)
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