STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 6

• Manufacturer Part Number: STGP35HF60W
• Description: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
• Manufacturer: STMicroelectronics

Specifications of STGP35HF60W

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
V
(norm)
I
CE(sat)
C
150
100
(norm)
1.4
1.2
0.8
0.6
0.4
(A)
V
50
1.05
0.95
0
1
CES
0.9
0
0
1
-50
Electrical characteristics (curves)
Output characteristics
Normalized V
Normalized breakdown voltage vs.
temperature
T
J
V
2
= -50 °C
GE
20
0
= 15 V
T
4
J
V
= 25 °C
GE
50
I
C
CE(sat)
= 15 V
40
= 1 mA
11 V
6
T
V
J
100
GE
= 150 °C
vs. I
= 6 V
10 V
9 V
8 V
60
7 V
8
C
AM16253v1
AM16250v1
T
V
AM16251v1
J
Doc ID 023894 Rev 1
CE
(°C)
I
(V)
C
(A)
Figure 3.
Figure 5.
Figure 7.
V
(norm)
CE(sat)
(norm)
V
I
GE(th)
C
1.4
1.2
0.8
0.6
150
100
1.1
0.9
0.8
0.7
0.6
(A)
1
50
-50
0
1
-50
0
I
10 A
C
= 5 A
Transfer characteristics
Normalized gate threshold voltage
vs. temperature
Normalized V
0
3
0
V
CE
I
C
V
V
= 10 V
= 250 µA
GE
GE
50
6
= 15 V
CE(sat)
50
= V
CE
vs. temperature
100
STGP35HF60W
9
100
I
I
I
C
C
C
AM16249v1
AM16254v1
20 A
= 80 A
= 60 A
= 40 A
30 A
V
AM16252v1
GE
T
J
T
(V)
(°C)
J
(°C)