FCPF260N60E Fairchild Semiconductor, FCPF260N60E Datasheet

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FCPF260N60E

Manufacturer Part Number
FCPF260N60E
Description
MOSFET Low Power Two-Input Logic Gate TinyLogic
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCPF260N60E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
260 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220F
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
15.5 S
Gate Charge Qg
48 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
36 W
Rise Time
11 ns
Typical Turn-off Delay Time
13 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCPF260N60E
Manufacturer:
FAIRCHILD
Quantity:
4 000
©2012 Fairchild Semiconductor Corporation
FCP260N60E / FCPF260N60E Rev. C3
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FCP260N60E / FCPF260N60E
N-Channel SuperFET
Features
• 650 V @T
• Max. R
• Ultra Low Gate Charge ( Typ. Q
• Low Effective Output Capacitance ( Typ. C
• 100% Avalanche Tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
DM
AR
600 V, 15 A, 260 mΩ
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
J
= 150°C
= 260 mΩ
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
g
= 48 nC)
®
T
oss
II MOSFET
C
= 25
.eff = 129 pF)
Parameter
Parameter
- DC
- AC
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
G
= 25
D
S
o
C)
C
C
1
= 25
= 100
o
Description
SuperFET
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
C
o
C)
TO-220F
o
C)
®
II MOSFET is Fairchild Semiconductor
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FCP260N60E FCPF260N60E
FCP260N60E FCPF260N60E
1.25
62.5
156
0.5
9.5
0.8
15
45
-55 to +150
D
S
292.5
1.56
600
±20
±30
100
300
3.0
20
March 2013
62.5
0.29
9.5*
3.5
0.5
15*
45*
36
www.fairchildsemi.com
®
’s first gen-
W/
o
Unit
V/ns
Unit
C/W
mJ
mJ
o
o
W
V
V
V
A
A
A
C
C
o
C

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FCPF260N60E Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 ® II MOSFET Description SuperFET eration of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis nC) tance and lower gate charge performance.This advanced tech- nology is tailored to minimize conduction loss, provide superior ...

Page 2

... 25° ≤ 7.5 A, di/dt ≤ 200 A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions mA, T ...

Page 3

... C iss = shorted) C oss = rss = C gd 0.5 0 Drain-Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 Figure 2. Transfer Characteristics μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V ...

Page 4

... C] 4 vs. Temperature 2.8 2.4 2.0 1.6 1.2 *Notes: 0 0.4 -80 - 120 Junction Temperature [ C] J vs. Case Temperature - FCPF260N60E 100 10 μ 100 s 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes 0 150 Single Pulse 0 100 ...

Page 5

... Typical Performance Characteristics Figure 13. Transient Thermal Response Curve - FCP260N60E 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 14. Transient Thermal Response Curve - FCPF260N60E 5 0.5 1 0.2 0.1 0.05 0.02 0.01 Single pulse 0.1 0. ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 (Continued) *Notes Rectangular Pulse Duration [sec] *Notes ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type ...

Page 8

... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 TO-220AB 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 TO-220F (Retractable) 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FCP260N60E / FCPF260N60E Rev. C3 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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