FCPF260N60E Fairchild Semiconductor, FCPF260N60E Datasheet - Page 4

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FCPF260N60E

Manufacturer Part Number
FCPF260N60E
Description
MOSFET Low Power Two-Input Logic Gate TinyLogic
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCPF260N60E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
260 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220F
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
15.5 S
Gate Charge Qg
48 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
36 W
Rise Time
11 ns
Typical Turn-off Delay Time
13 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCPF260N60E
Manufacturer:
FAIRCHILD
Quantity:
4 000
©2012 Fairchild Semiconductor Corporation
FCP260N60E / FCPF260N60E Rev. C3
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
1.12
1.08
1.04
1.00
0.96
0.92
0.88
100
0.1
10
16
12
1
-80
8
4
0
0.1
25
vs. Case Temperature - FCP260N60E
-40
vs. Temperature
T
50
T
J
*Notes:
Operation in This Area
is Limited by R
V
, Junction Temperature [
C
1. T
2. T
3. Single Pulse
DS
1
, Case Temperature [
, Drain-Source Voltage [V]
C
J
0
= 150
= 25
75
o
o
C
C
40
10
DS(on)
100
DC
10ms
80
1ms
*Notes:
o
100
C]
1. V
2. I
100
o
125
C]
D
120
GS
μ
= 10mA
s
= 0V
10
μ
s
160
1000
150
(Continued)
4
Figure 12. Eoss vs. Drain to Source Voltage
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
0.01
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.1
10
8
6
4
2
0
1
-80
vs. Case Temperature - FCPF260N60E
0.1
0
Switching Capability
vs. Temperature
100
-40
*Notes:
V
Operation in This Area
is Limited by R
T
DS
1. T
2. T
3. Single Pulse
V
J
, Junction Temperature [
, Drain to Source Voltage [V]
DS
1
C
J
, Drain-Source Voltage [V]
= 150
= 25
200
0
o
C
o
C
DS(on)
300
40
10
400
80
10ms
1ms
*Notes:
100
100
1. V
2. I
DC
o
www.fairchildsemi.com
C]
D
500
μ
120
GS
s
= 7.5A
10
= 10V
μ
s
1000
600
160

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