FCPF260N60E Fairchild Semiconductor, FCPF260N60E Datasheet - Page 5

• Manufacturer Part Number: FCPF260N60E
• Description: MOSFET Low Power Two-Input Logic Gate TinyLogic
• Manufacturer: Fairchild Semiconductor

Specifications of FCPF260N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Resistance Drain-source Rds (on): 260 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 15.5 S
• Gate Charge Qg: 48 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 36 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 13 ns

©2012 Fairchild Semiconductor Corporation
FCP260N60E / FCPF260N60E Rev. C3
Typical Performance Characteristics
Figure 14. Transient Thermal Response Curve - FCPF260N60E
Figure 13. Transient Thermal Response Curve - FCP260N60E
0.01
0.05
0.1
0.1
2
1
5
1
10
10
-5
-5
0.02
0.01
Single pulse
0.05
0.05
0.02
Single pulse
0.5
0.2
0.1
0.01
0.5
0.2
0.1
10
-4
10
-4
10
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
-3
(Continued)
10
10
-3
-2
5
10
10
-1
-2
*Notes:
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
1. Z
2. Duty Factor, D= t
3. T
P
DM
10
DM
θ
JM
θ
JM
0
JC
JC
(t) = 0.8
- T
(t) = 3.5
- T
10
C
C
t
1
t
= P
1
-1
= P
t
2
t
2
10
o
DM
o
DM
C/W Max.
C/W Max.
1
* Z
* Z
1
1
θ
/t
θ
/t
JC
JC
2
2
(t)
(t)
100
1
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