IHW20N135R3FKSA1 Infineon Technologies, IHW20N135R3FKSA1 Datasheet - Page 14
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IHW20N135R3FKSA1
Manufacturer Part Number
IHW20N135R3FKSA1
Description
IGBT Transistors
Manufacturer
Infineon Technologies
Datasheet
1.IHW20N135R3FKSA1.pdf
(15 pages)
Specifications of IHW20N135R3FKSA1
Rohs
yes
Collector- Emitter Voltage Vceo Max
1.35 kV
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
40 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
155 W
Package / Case
TO-247-3
Continuous Collector Current Ic Max
20 A
Mounting Style
Through Hole
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