IHW20N135R3FKSA1 Infineon Technologies, IHW20N135R3FKSA1 Datasheet - Page 2

• Manufacturer Part Number: IHW20N135R3FKSA1
• Description: IGBT Transistors
• Manufacturer: Infineon Technologies

Specifications of IHW20N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 155 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 20 A
• Mounting Style: Through Hole

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