IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet - Page 3

• Manufacturer Part Number: IXXN110N65B4H1
• Description: IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65B4H1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 215 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: '+ 150 C
• Package / Case: SOT-227
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: '- 55 C
• Mounting Style: SMD/SMT

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200
160
120
200
160
120
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
40
80
40
0
0
0
0
8
0.5
0.5
Fig. 3. Output Characteristics @ T
9
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
1
10
1
Gate-to-Emitter Voltage
1.5
V
1.5
V
CE
11
V
CE
2
GE
- Volts
- Volts
V
- Volts
GE
2.5
V
= 15V
GE
12
14V
13V
2
= 15V
14V
3
I
2.5
13
C
J
J
= 220A
= 150ºC
= 25ºC
3.5
110A
55A
T
J
14
3
= 25ºC
4
12V
11V
10V
9V
8V
7V
13V
12V
11V
10V
9V
8V
7V
4.5
3.5
15
300
250
200
150
100
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
-25
14V
2
= 15V
5
4
0
Fig. 4. Dependence of V
12V
11V
10V
13V
9V
8V
7V
Fig. 6. Input Admittance
Junction Temperature
25
6
T
6
J
IXXN110N65B4H1
- Degrees Centigrade
V
CE
50
V
8
GE
- Volts
7
- Volts
T
I
J
C
10
75
= - 40ºC
= 220A
I
C
25ºC
= 110A
I
CE(sat)
100
C
12
8
= 55A
on
125
14
T
J
J
= 150ºC
9
= 25ºC
150
16
175
10
18