IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet - Page 6

• Manufacturer Part Number: IXXN110N65B4H1
• Description: IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65B4H1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 215 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: '+ 150 C
• Package / Case: SOT-227
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: '- 55 C
• Mounting Style: SMD/SMT

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
25
2
Fig. 20. Inductive Turn-on Switching Times vs.
t
R
V
Fig. 18. Inductive Turn-on Switching Times vs.
T
V
t
3
r i
CE
G
r i
J
CE
= 150ºC, V
= 2
= 400V
= 400V
Ω
4
I
I
C
C
, V
50
= 55A
= 110A
GE
5
GE
= 15V
t
t
d(on)
d(on)
Junction Temperature
= 15V
6
T
J
- - - -
- - - -
- Degrees Centigrade
Gate Resistance
7
75
R
G
8
- Ohms
9
100
10
11
12
125
I
C
I
13
C
= 110A
= 55A
14
150
15
100
90
80
70
60
50
40
30
20
10
70
65
60
55
50
45
40
35
30
25
160
140
120
100
80
60
40
20
55
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
60
r i
CE
G
= 2
= 400V
Ω
65
, V
T
J
GE
= 25ºC
70
= 15V
t
d(on)
Collector Current
75
- - - -
IXXN110N65B4H1
80
I
C
- Amperes
85
90
95
T
J
= 150ºC
100
105
110
60
55
50
45
40
35
30
25