IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet - Page 4

• Manufacturer Part Number: IXXN110N65B4H1
• Description: IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65B4H1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 215 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: '+ 150 C
• Package / Case: SOT-227
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: '- 55 C
• Mounting Style: SMD/SMT

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
30
0.0001
Fig. 9. Capacitance
15
40
I
C
V
CE
- Amperes
20
- Volts
50
60
T
J
25
= - 40ºC
150ºC
C ies
C oes
C res
25ºC
Fig. 11. Maximum Transient Thermal Impedance
70
0.001
30
80
35
90
Pulse Width - Seconds
100
40
0.01
240
200
160
120
16
14
12
10
80
40
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
20
= 150ºC
= 2
= 110A
= 10mA
= 325V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
40
0.1
60
300
Fig. 8. Gate Charge
Q
IXXN110N65B4H1
G
80
- NanoCoulombs
V
CE
100
400
- Volts
120
1
500
140
160
600
180
200
700
10