IXXH110N65C4 Ixys, IXXH110N65C4 Datasheet - Page 2

• Manufacturer Part Number: IXXH110N65C4
• Description: IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH110N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 234 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 880 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
ie
oes
res
on
of
on
off
thJC
thCS
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 110A, V
= 55A, V
= 55A, V
= 60A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 400V, R
= 400V, R
GE
GE
CE
GE
GE
= 15V
= 15V
= 10V, Note 1
G
G
= 15V, V
= 0V, f = 1MHz
= 2
= 2
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
Characteristic Values
24
Min.
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
3690
2.30
0.60
2.90
0.77
0.21
Typ.
143
240
140
180
130
40
32
76
35
46
30
30
32
43
CE
(clamp), T
Max.
0.17 °C/W
1.05 mJ
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXXH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
IXXH110N65C4
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
3 - Emitter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216