IXXH110N65C4 Ixys, IXXH110N65C4 Datasheet - Page 4

• Manufacturer Part Number: IXXH110N65C4
• Description: IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH110N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 234 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 880 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
60
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
0.0001
Fig. 9. Capacitance
T
15
J
= - 40ºC
80
I
V
C
CE
- Amperes
25ºC
100
20
- Volts
150ºC
C ies
C oes
C res
120
25
140
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
160
35
180
Pulse Width - Seconds
200
40
0.01
240
200
160
120
16
14
12
10
80
40
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
150
J
C
G
G
CE
= 150ºC
= 110A
= 10mA
20
= 2
= 325V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
40
250
0.1
300
60
Fig. 8. Gate Charge
Q
G
350
- NanoCoulombs
V
80
IXXH110N65C4
CE
400
- Volts
100
450
1
120
500
550
140
600
160
650
180
700
10