IXXH110N65C4 Ixys, IXXH110N65C4 Datasheet - Page 6

• Manufacturer Part Number: IXXH110N65C4
• Description: IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH110N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 234 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 880 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
140
120
100
180
160
140
120
100
80
60
40
20
80
60
40
20
0
25
2
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
T
V
t
r i
J
CE
= 150ºC, V
= 400V
4
50
GE
t
Junction Temperature
d(on)
= 15V
T
6
J
Gate Resistance
- - - -
- Degrees Centigrade
75
I
R
C
= 110A
G
- Ohms
8
I
C
= 110A
100
t
R
V
r i
CE
G
= 2
= 400V
I
10
C
Ω
= 55A
, V
GE
125
= 15V
t
d(on)
12
I
C
= 55A
- - - -
150
14
50
46
42
38
34
30
26
100
90
80
70
60
50
40
30
20
10
130
110
90
70
50
30
10
55
T
J
Fig. 19. Inductive Turn-on Switching Times vs.
= 25ºC
t
R
V
60
r i
CE
G
= 2
= 400V
Ω
65
, V
GE
70
t
= 15V
d(on)
Collector Current
T
75
- - - -
J
= 150ºC
80
I
C
- Amperes
IXXH110N65C4
85
90
95
100
IXYS REF: IXX_110N65C4(E8) 01-30-13-A
105
110
55
50
45
40
35
30
25