VS-CPV364M4FPBF Vishay, VS-CPV364M4FPBF Datasheet

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VS-CPV364M4FPBF

Manufacturer Part Number
VS-CPV364M4FPBF
Description
IGBT Transistors 600 Volt 15 Amp
Manufacturer
Vishay
Datasheet

Specifications of VS-CPV364M4FPBF

Product Category
IGBT Transistors
Rohs
yes
Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
27 A
Maximum Operating Temperature
+ 150 C
Package / Case
IMS-2-13
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Notes
(1)
(2)
Document Number: 94487
Revision: 01-Sep-08
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage
temperature range
Soldering temperature
Mounting torque
I
Modulation depth (see fig. 1)
RMS
Repetitive rating; V
V
CC
per phase (4.6 kW total)
at I
= 80 % (V
with T
V
Supply voltage
Power factor
CE(on)
C
= 15 A, 25 °C
C
T
(typical)
= 90 °C
J
CES
), V
GE
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
= 20 V, L = 10 µH, R
IMS-2
For technical questions, contact: ind-modules@vishay.com
SYMBOL
T
I
I
V
V
18 A
CM
J
360 Vdc
LM
V
125 °C
I
, T
115 %
1.35 V
P
ISOL
CES
I
I
FM
GE
C
F
G
D
0.8
(2)
(1)
Stg
= 10 Ω (see fig. 19)
RMS
IGBT SIP Module
T
T
T
Any terminal to case, t = 1 minute
T
T
For 10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
C
C
C
C
C
(Fast IGBT)
= 25 °C
= 100 °C
= 100 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
• Optimized for medium speed 1 to 10 kHz
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay‘s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
See fig. 1 for current vs. frequency curve
®
soft ultrafast diodes
Vishay High Power Products
- 40 to + 150
(0.55 to 0.8)
CPV364M4FPbF
MAX.
5 to 7
2500
± 20
600
300
9.3
27
15
80
80
80
63
25
www.vishay.com
UNITS
(N · m)
lbf · in
RoHS
V
COMPLIANT
RMS
°C
W
V
A
V
1

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VS-CPV364M4FPBF Summary of contents

Page 1

... Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED • Optimized for medium speed kHz See fig. 1 for current vs. frequency curve • Totally lead (Pb)-free • Designed and qualified for industrial level DESCRIPTION ...

Page 2

... 600 CES 600 150 ° ± GES GE For technical questions, contact: ind-modules@vishay.com TYP. MAX. - 2.0 - 3.0 0. 0.7 - MIN. TYP. MAX. 600 - - - 0. 1.35 1 1.60 - See fig ...

Page 3

... See fig 125 ° ° See fig 125 ° ° /dt See fig. 17 (rec 125 °C J For technical questions, contact: ind-modules@vishay.com CPV364M4FPbF Vishay High Power Products MIN. TYP. MAX. - 100 160 - 220 330 ...

Page 4

... T , Case Temperature ( 15V PULSE WIDTH 2 7.5 C 1.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) ° J Fig Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94487 Revision: 01-Sep-08 150 ...

Page 5

... 15A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Voltage Document Number: 94487 Revision: 01-Sep-08 IGBT SIP Module (Fast IGBT) SINGLE PULSE 0.001 0. Rectangular Pulse Duration (sec) 1 SHORTED 100 120 Fig ...

Page 6

... IGBT SIP Module (Fast IGBT 100 150° 125° 25° 0.8 1.2 1.6 2.0 Forward Voltage Drop - V Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current For technical questions, contact: ind-modules@vishay.com 1000 V = 20V 125 C J 100 10 SAFE OPERATING AREA 100 V ...

Page 7

... V = 200V 125° 25° 30A 15A 5. /dt - (A/µs) f Fig Typical Reverse Recovery Time vs. dI 100 V = 200V 125° 25° 30A 15A 5. /dt - (A/µs) f Fig Typical Recovery Current vs. dI ...

Page 8

... Vce GATE SIGNAL DEVICE UNDER TES CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit For technical questions, contact: ind-modules@vishay.com GATE VOLTAGE D.U.T. 10% +Vg +Vg DUT VOLTAGE Vce AND CURRENT 10% Ic Vcc Ipk 90 Vce ...

Page 9

... LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com CPV364M4FPbF Vishay High Power Products 480 °C C Fig Pulsed Collector Current Test Circuit http://www.vishay.com/doc?95066 www.vishay.com 9 ...

Page 10

... IMS-2 (SIP) 62.43 (2.458) 53.85 (2.120 0.38 (0.015) 3.05 ± 0.38 1.27 (0.050) (0.120 ± 0.015 2.54 (0.100) 0.76 (0.030 IMS-2 Package Outline (13 Pins) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 0.51 (0.020) 6.10 (0.240) www.vishay.com 1 ...

Page 11

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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