VS-CPV364M4FPBF Vishay, VS-CPV364M4FPBF Datasheet - Page 5

• Manufacturer Part Number: VS-CPV364M4FPBF
• Description: IGBT Transistors 600 Volt 15 Amp
• Manufacturer: Vishay

Specifications of VS-CPV364M4FPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 27 A
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

Document Number: 94487
Revision: 01-Sep-08
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
4000
3000
2000
1000
0
20
16
12
8
4
0
1
0
V
I
V
CC
C
CE
= 400V
= 15A
, Collector-to-Emitter Voltage (V)
20
Q , Total Gate Charge (nC)
0.01
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
V
0.1
10
0.00001
G
GE
C
C
1
C
ies
oes
res
= 0V
D = 0.50
40
0.20
0.10
0.02
0.01
0.05
1
0
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
60
f = 1 MHz
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
80
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SHORTED
100
1
0
120
t , Rectangular Pulse Duration (sec)
IGBT SIP Module
0.001
0
1
(Fast IGBT)
0.01
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Notes:
1. Duty factor D = t / t
2. Peak T = P
1.45
1.40
1.35
1.30
0.1
0.1
10
1
-60 -40 -20
0
R
V
V
V
V
T
I
GE
CC
Vishay High Power Products
J
C
J
G
CC
GE
= 25 C
= 10
= 15V
= 480V
DM
= 480V
= 15V
= 15A
T , Junction Temperature ( C )
R , Gate Resistance ( )
10
x Z
J
G
1
°
Ω
thJC
0
2
P
1
DM
+ T
20 40
20
C
t
1
CPV364M4FPbF
t
2
60
30
80 100 120 140 160
10
Ω
I =
I =
I =
C
C
C
°
40
7.5
30
15
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A
A
A
50
5