VS-CPV364M4FPBF Vishay, VS-CPV364M4FPBF Datasheet - Page 7

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VS-CPV364M4FPBF

Manufacturer Part Number
VS-CPV364M4FPBF
Description
IGBT Transistors 600 Volt 15 Amp
Manufacturer
Vishay
Datasheet

Specifications of VS-CPV364M4FPBF

Product Category
IGBT Transistors
Rohs
yes
Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
27 A
Maximum Operating Temperature
+ 150 C
Package / Case
IMS-2-13
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Document Number: 94487
Revision: 01-Sep-08
Fig. 14 - Typical Reverse Recovery Time vs. dI
Fig. 15 - Typical Recovery Current vs. dI
100
100
10
80
60
40
20
1
1
1
0
0
0
0
V = 200V
T = 125°C
T = 25°C
R
J
J
I = 15A
F
I = 30A
di /dt - (A/µs)
F
di /dt - (A/µs)
f
f
I = 30A
F
V = 200V
T = 125°C
T = 25°C
I = 15A
I = 5.0A
R
J
J
I = 5.0A
F
F
F
For technical questions, contact: ind-modules@vishay.com
F
/dt
F
1
1
IGBT SIP Module
0
/dt
0
0
0
0
0
(Fast IGBT)
1000
100
800
600
400
200
Fig. 16 - Typical Stored Charge vs. dI
0
1
1
0
0
Fig. 17 - Typical dI
I = 5.0A
0
0
I = 30A
Vishay High Power Products
F
F
V = 200V
T = 125°C
T = 25°C
V = 200V
T = 125°C
T = 25°C
R
J
J
I = 15A
R
J
J
I = 15A
F
F
I = 5.0A
F
di /dt - (A/µs)
di /dt - (A/µs)
I = 30A
F
f
CPV364M4FPbF
f
(rec)M
/dt vs dI
F
/dt
F
www.vishay.com
/dt
1
1
0
0
0
0
0
0
7

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