FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 2

• Manufacturer Part Number: FDMS86152
• Description: MOSFET 100V N-Channel Power Trench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86152

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 42 S
• Gate Charge Qg: 36 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 6 ns
• Typical Turn-off Delay Time: 25 ns

©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 3 mH, I
AS
= 19 A, V
Parameter
DD
= 100 V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 45 °C/W when mounted on a
= 25 °C unless otherwise noted
1 in
GS
2
= 10 V. 100% test at L = 0.3 mH, I
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 14 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 0 V, I
= 0 V, I
= 80 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, V
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 6 V
= ±20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 2.1 A
= 14 A
AS
= 11.5 A
GS
GS
GEN
GS
= 250 μA
= 14 A, T
= 14 A
= 14 A
= 14 A,
DS
= 42 A.
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 14 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 115 °C/W when mounted on a
100
Min
2
minimum pad of 2 oz copper.
2530
0.70
0.78
10.7
595
Typ
-10
0.9
7.2
5.2
7.3
8.7
59
74
22
17
25
36
23
90
42
6
5
3
3370
±100
Max
119
795
1.2
1.3
θCA
30
12
39
10
50
33
94
35
11
10
www.fairchildsemi.com
4
1
6
is determined by
mV/°C
mV/°C
Units
mΩ
nC
μA
nA
pF
pF
nC
nC
nC
nC
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S