FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 2
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FDMS86152
Manufacturer Part Number
FDMS86152
Description
MOSFET 100V N-Channel Power Trench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86152.pdf
(7 pages)
Specifications of FDMS86152
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
42 S
Gate Charge Qg
36 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
6 ns
Typical Turn-off Delay Time
25 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86152
Manufacturer:
ON/安森美
Quantity:
20 000
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 3 mH, I
AS
= 19 A, V
Parameter
DD
= 100 V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 45 °C/W when mounted on a
= 25 °C unless otherwise noted
1 in
GS
2
= 10 V. 100% test at L = 0.3 mH, I
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 14 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 0 V, I
= 0 V, I
= 80 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, V
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 6 V
= ±20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 2.1 A
= 14 A
AS
= 11.5 A
GS
GS
GEN
GS
= 250 μA
= 14 A, T
= 14 A
= 14 A
= 14 A,
DS
= 42 A.
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 14 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 115 °C/W when mounted on a
100
Min
2
minimum pad of 2 oz copper.
2530
0.70
0.78
10.7
595
Typ
-10
0.9
7.2
5.2
7.3
8.7
59
74
22
17
25
36
23
90
42
6
5
3
3370
±100
Max
119
795
1.2
1.3
θCA
30
12
39
10
50
33
94
35
11
10
www.fairchildsemi.com
4
1
6
is determined by
mV/°C
mV/°C
Units
mΩ
nC
μA
nA
pF
pF
nC
nC
nC
nC
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S