FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 3
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FDMS86152
Manufacturer Part Number
FDMS86152
Description
MOSFET 100V N-Channel Power Trench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86152.pdf
(7 pages)
Specifications of FDMS86152
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
42 S
Gate Charge Qg
36 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
6 ns
Typical Turn-off Delay Time
25 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86152
Manufacturer:
ON/安森美
Quantity:
20 000
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Typical Characteristics
260
195
130
260
195
130
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
65
65
Figure 1.
0
0
-75
Figure 5. Transfer Characteristics
2
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
DS
I
V
-50
GS
D
vs Junction Temperature
GS
= 5 V
= 14 A
= 10 V
= 10 V
T
T
V
V
-25
J
J
1
On-Region Characteristics
GS
DS
,
= 150
JUNCTION TEMPERATURE
4
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
0
o
C
2
V
25
T
GS
J
μ
T
= -55
s
J
6
= 8 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 25
50
T
J
o
3
C
= 25 °C unless otherwise noted
o
C
75
(
100 125 150
o
8
C
)
4
V
V
V
GS
GS
GS
= 7 V
= 5 V
= 6 V
μ
s
10
5
3
0.001
0.01
300
100
0.1
10
30
25
20
15
10
1
4
3
2
1
0
5
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
4
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
V
T
= 0 V
SD
J
GS
0.2
= 150
5
, BODY DIODE FORWARD VOLTAGE (V)
V
= 5 V
Normalized On-Resistance
GS
On-Resistance vs Gate to
65
Source Voltage
,
Source to Drain Diode
o
GATE TO SOURCE VOLTAGE (V)
I
I
C
D
D
0.4
,
= 14 A
6
DRAIN CURRENT (A)
T
J
μ
V
130
0.6
= 125
s
GS
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 6 V
T
o
C
J
= 25
0.8
V
T
8
GS
J
= -55
o
T
195
= 7 V
C
J
= 25
www.fairchildsemi.com
V
o
1.0
GS
V
C
9
GS
o
= 10 V
C
= 8 V
μ
s
260
1.2
10