FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 3

• Manufacturer Part Number: FDMS86152
• Description: MOSFET 100V N-Channel Power Trench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86152

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 42 S
• Gate Charge Qg: 36 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 6 ns
• Typical Turn-off Delay Time: 25 ns

©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Typical Characteristics
260
195
130
260
195
130
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
65
65
Figure 1.
0
0
-75
Figure 5. Transfer Characteristics
2
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
DS
I
V
-50
GS
D
vs Junction Temperature
GS
= 5 V
= 14 A
= 10 V
= 10 V
T
T
V
V
-25
J
J
1
On-Region Characteristics
GS
DS
,
= 150
JUNCTION TEMPERATURE
4
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
0
o
C
2
V
25
T
GS
J
μ
T
= -55
s
J
6
= 8 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 25
50
T
J
o
3
C
= 25 °C unless otherwise noted
o
C
75
(
100 125 150
o
8
C
)
4
V
V
V
GS
GS
GS
= 7 V
= 5 V
= 6 V
μ
s
10
5
3
0.001
0.01
300
100
0.1
10
30
25
20
15
10
1
4
3
2
1
0
5
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
4
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
V
T
= 0 V
SD
J
GS
0.2
= 150
5
, BODY DIODE FORWARD VOLTAGE (V)
V
= 5 V
Normalized On-Resistance
GS
On-Resistance vs Gate to
65
Source Voltage
,
Source to Drain Diode
o
GATE TO SOURCE VOLTAGE (V)
I
I
C
D
D
0.4
,
= 14 A
6
DRAIN CURRENT (A)
T
J
μ
V
130
0.6
= 125
s
GS
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 6 V
T
o
C
J
= 25
0.8
V
T
8
GS
J
= -55
o
T
195
= 7 V
C
J
= 25
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V
o
1.0
GS
V
C
9
GS
o
= 10 V
C
= 8 V
μ
s
260
1.2
10