FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 5
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FDMS86152
Manufacturer Part Number
FDMS86152
Description
MOSFET 100V N-Channel Power Trench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86152.pdf
(7 pages)
Specifications of FDMS86152
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
42 S
Gate Charge Qg
36 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
6 ns
Typical Turn-off Delay Time
25 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS86152
Manufacturer:
ON/安森美
Quantity:
20 000
©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Typical Characteristics
0.0001
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
SINGLE PULSE
R
θ
= 25 °C unless otherwise noted
JA
= 115
10
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
100
x R
2
θJA
t
1
+ T
t
2
www.fairchildsemi.com
A
1000