FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 5

• Manufacturer Part Number: FDMS86152
• Description: MOSFET 100V N-Channel Power Trench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86152

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 42 S
• Gate Charge Qg: 36 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 6 ns
• Typical Turn-off Delay Time: 25 ns

©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Typical Characteristics
0.0001
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
SINGLE PULSE
R
θ
= 25 °C unless otherwise noted
JA
= 115
10
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
100
x R
2
θJA
t
1
+ T
t
2
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A
1000