PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN013-100BS
Product data sheet
Symbol
Fig. 1.
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
GS
tot
DS(AL)S
(A)
I
D
80
60
40
20
0
Continuous drain current as a function of
mounting base temperature
0
Parameter
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
[1]
100
Continuous current is limited by package
150
All information provided in this document is subject to legal disclaimers.
T
003aac512
mb
(°C)
200
Conditions
V
V
pulsed; t
T
T
pulsed; t
V
V
mb
mb
GS
GS
GS
sup
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
= 25 °C;
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; unclamped; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Fig. 2.
Fig. 2
mb
mb
j(init)
P
= 100 °C;
= 25 °C;
(%)
der
= 25 °C; I
120
80
40
mb
mb
0
Normalized total power dissipation as a
function of mounting base temperature
0
= 25 °C;
= 25 °C
Fig. 1
Fig. 1
D
GS
= 68 A;
= 50 Ω
50
Fig. 3
100
[1]
[1]
[1]
PSMN013-100BS
Min
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2012. All rights reserved
T
mb
03aa16
Max
(°C)
20
47
68
272
170
175
175
260
68
272
127
200
Unit
V
A
A
A
W
°C
°C
°C
A
A
mJ
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