PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN013-100BS
Product data sheet
Fig. 11. Sub-threshold drain current as a function of
Fig. 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
- 1
- 2
- 3
- 4
- 5
- 6
30
25
20
15
10
gate-source voltage
of drain current; typical values
0
0
V
GS
(V) = 4.5
20
5
6
2
min
40
10
typ
4
60
max
V
20
All information provided in this document is subject to legal disclaimers.
GS
003aad578
I
D
(V)
03aa35
(A)
80
6
4 October 2012
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Fig. 12. Normalized drain-source on-state resistance
Fig. 14. Gate-source voltage as a function of gate
a
V
(V)
GS
3.2
2.4
1.6
0.8
10
0
8
6
4
2
0
factor as a function of junction temperature
charge; typical values
-60
0
15
0
V
DS
60
30
PSMN013-100BS
= 50V
120
45
© NXP B.V. 2012. All rights reserved
Q
003aad774
003a a d583
T
G
j
(°C)
(nC)
180
60
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