PSMN013-100BS,118 NXP Semiconductors, PSMN013-100BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN013-100BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 68 A
• Resistance Drain-source Rds (on): 13.9 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN013-100BS
Product data sheet
Fig. 15. Gate charge waveform definitions
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
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N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
= 175 °C
0.6
Fig. 16. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
0.9
10
25 °C
as a function of drain-source voltage; typical
values
- 2
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V
S D
(V)
1.2
10
- 1
PSMN013-100BS
1
10
© NXP B.V. 2012. All rights reserved
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DS
C
C
C
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iss
oss
(V)
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