PSMN2R7-30BL,118 NXP Semiconductors, PSMN2R7-30BL,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R7-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R7-30BL
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DSon
100
(A)
I
10
80
60
40
20
D
8
6
4
2
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
5
1
T
j
= 175 °C
10
2
T
j
15
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
V
003aad412
003aad406
V
GS
GS
(V)
(V)
20
4
Rev. 1 — 21 March 2012
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
Fig 8.
Fig 10. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
(A)
I
I
120
D
D
90
60
30
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10
4.5
3.5
min
1
1
PSMN2R7-30BL
typ
2
2
V
© NXP B.V. 2012. All rights reserved.
GS
V
V
DS
GS
003aab271
003aad404
(V) = 3
max
(V)
(V)
2.8
2.6
2.4
3
3
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