PSMN2R7-30BL,118 NXP Semiconductors, PSMN2R7-30BL,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R7-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R7-30BL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003a a c982
T
T
j
j
(°C)
( ° C)
03aa27
180
180
Rev. 1 — 21 March 2012
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
V
GS
20
(V) = 2.8
Q
GS1
I
Q
PSMN2R7-30BL
D
GS
40
Q
GS2
Q
G(tot)
60
4.5
Q
GD
© NXP B.V. 2012. All rights reserved.
80
003aad405
003aaa508
I
D
3
(A)
3.5
10
100
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