PSMN3R3-80ES,127 NXP Semiconductors, PSMN3R3-80ES,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN3R3-80ES,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT226 (I2PAK)
PSMN3R3-80ES
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 1 — 31 October 2011
1.6
1.2
D
1
3
0
b
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
PSMN3R3-80ES
PROJECTION
EUROPEAN
c
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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