PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet

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PSMN3R3-60PLQ

Manufacturer Part Number
PSMN3R3-60PLQ
Description
MOSFET N-Channel MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN3R3-60PLQ.pdf (13 pages)

Specifications of PSMN3R3-60PLQ

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
130 A
Resistance Drain-source Rds (on)
7.5 mOhms
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
109 ns
Gate Charge Qg
175 nC
Power Dissipation
293 W
Rise Time
100 ns
Typical Turn-off Delay Time
158 ns
Scan or click this QR code to view the latest information for this product
1. General description
2. Features and benefits
3. Applications
4. Quick reference data
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
G(tot)
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
total gate charge
gate-drain charge
non-repetitive drain-
source avalanche
energy
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design
and manufacture has been optimized for use in battery operated power tools.
•
•
•
•
•
•
•
[1]
PSMN3R3-60PL
N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
7 February 2013
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Logic level gate
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
Continuous current is limited by package.
Conditions
T
V
T
V
Fig. 11
V
Fig.
I
V
Fig. 3
D
j
mb
GS
GS
GS
GS
≥ 25 °C; T
= 130 A; V
= 25 °C;
13;
= 10 V; T
= 10 V; I
= 10 V; I
= 10 V; T
Fig. 14
j
D
D
sup
Fig. 2
≤ 175 °C
mb
j(init)
= 25 A; T
= 25 A; V
≤ 60 V; R
= 25 °C;
= 25 °C; unclamped;
j
DS
= 25 °C;
Fig. 1
GS
= 48 V;
= 50 Ω;
[1]
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
2.7
175
31
-
Max
60
130
293
3.4
-
-
372
Unit
V
A
W
mΩ
nC
nC
mJ

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PSMN3R3-60PLQ Summary of contents

Page 1

... PSMN3R3-60PL N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 7 February 2013 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • ...

Page 2

... kΩ ° 100 ° °C; pulsed; t ≤ 10 µ All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Graphic symbol mbb076 Version SOT78 Min Max - -20 20 Fig 130 [1] Fig. 1 ...

Page 3

... Fig. 3 003aak803 120 P der (%) 120 150 180 T (°C) j Fig. 2. All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Min - -55 - ° Ω 100 150 T Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2013. All rights reserved ...

Page 4

... Limit R Limit DSon DSon Conditions Fig. 5 vertical in still air All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aak804 (ms Min Typ - 0 © NXP B.V. 2013. All rights reserved 003aak805 ...

Page 5

... ° Fig 175 ° Fig. 12; Fig MHz All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aah288 t P δ (s) p Min Typ Max ...

Page 6

... ° /dt = -100 A/µ 003aah529 3.5 3 2.8 2.6 2 (V) DS Fig. 7. All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Min Typ = 175 - 10115 - - 822 - 427 = 54 100 - 158 - 109 Fig ...

Page 7

... (V) GS Fig. 9. 003aah026 R typ max (V) GS Fig. 11. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 3 2.5 max 2 typ 1.5 min 1 0 Gate-source threshold voltage as a function of junction temperature 15 2.6 2.8 3 DSon (m Ω ...

Page 8

... Fig. 13. Gate charge waveform definitions 120 180 T ( ° 003aah582 V = 48V DS 120 180 Q (nC) G Fig. 15. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 400 I S (A) 300 200 T = 175 ° 100 0 0 0.5 1 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aah539 = 25 ° C 1.5 V (V) SD © NXP B.V. 2013. All rights reserved ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 11

... NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN3R3-60PL Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...

Page 13

... For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 February 2013 PSMN3R3-60PL Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...

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