PSMN3R3-60PLQ NXP Semiconductors, PSMN3R3-60PLQ Datasheet
PSMN3R3-60PLQ
Specifications of PSMN3R3-60PLQ
Related parts for PSMN3R3-60PLQ
PSMN3R3-60PLQ Summary of contents
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... PSMN3R3-60PL N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 7 February 2013 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • ...
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... kΩ ° 100 ° °C; pulsed; t ≤ 10 µ All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Graphic symbol mbb076 Version SOT78 Min Max - -20 20 Fig 130 [1] Fig. 1 ...
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... Fig. 3 003aak803 120 P der (%) 120 150 180 T (°C) j Fig. 2. All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Min - -55 - ° Ω 100 150 T Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2013. All rights reserved ...
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... Limit R Limit DSon DSon Conditions Fig. 5 vertical in still air All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aak804 (ms Min Typ - 0 © NXP B.V. 2013. All rights reserved 003aak805 ...
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... ° Fig 175 ° Fig. 12; Fig MHz All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aah288 t P δ (s) p Min Typ Max ...
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... ° /dt = -100 A/µ 003aah529 3.5 3 2.8 2.6 2 (V) DS Fig. 7. All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL Min Typ = 175 - 10115 - - 822 - 427 = 54 100 - 158 - 109 Fig ...
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... (V) GS Fig. 9. 003aah026 R typ max (V) GS Fig. 11. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 3 2.5 max 2 typ 1.5 min 1 0 Gate-source threshold voltage as a function of junction temperature 15 2.6 2.8 3 DSon (m Ω ...
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... Fig. 13. Gate charge waveform definitions 120 180 T ( ° 003aah582 V = 48V DS 120 180 Q (nC) G Fig. 15. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 400 I S (A) 300 200 T = 175 ° 100 0 0 0.5 1 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL 003aah539 = 25 ° C 1.5 V (V) SD © NXP B.V. 2013. All rights reserved ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...
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... NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN3R3-60PL Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...
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... For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 February 2013 PSMN3R3-60PL Product data sheet N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 7 February 2013 PSMN3R3-60PL © NXP B.V. 2013. All rights reserved ...