BYV32EB-200 /T3 NXP Semiconductors, BYV32EB-200 /T3 Datasheet - Page 4
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BYV32EB-200 /T3
Manufacturer Part Number
BYV32EB-200 /T3
Description
Rectifiers TAPE-7 REC-EPI
Manufacturer
NXP Semiconductors
Datasheet
1.BYV32EB-200_T3.pdf
(9 pages)
Specifications of BYV32EB-200 /T3
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
SMD/SMT
Package / Case
D2-PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
800
Part # Aliases
BYV32EB-200,118
NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32EB-200_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
minimum footprint FR4 board
Conditions
I
I
V
V
I
I
ramp recovery; T
I
current = 0.25 A; step recovery; T
see
I
F
F
F
F
F
F
10
−1
−2
−3
R
R
1
10
= 8 A; T
= 20 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 200 V; T
= 200 V; T
−6
Figure 6
10
−5
j
R
R
F
= 150 °C; see
R
j
/dt = 10 A/µs; see
= 30 V; dI
= 30 V; dI
= 25 °C
Rev. 04 — 2 March 2009
= 1 A; measured at reverse
10
j
j
= 25 °C
= 100 °C
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs
/dt = 100 A/µs;
10
Figure 4
P
−2
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Figure 7
10
t
Figure 5
p
j
−1
T
= 25 °C;
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32EB-200
Typ
-
-
50
Typ
0.72
1
6
0.2
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
0.85
1.15
30
0.6
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
µA
mA
nC
ns
ns
V
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